? 2008 ixys corporation, all rights reserved trench gate hiperfet n-channel power mosfet phase leg topology ds100048(09/08) symbol test conditions characteristic values min. typ. max. c p coupling capacitance between shorted 40 pf pins and mounting tab in the case d s ,d a pin - pin 1.7 mm d s ,d a pin - backside metal 5.5 mm weight 9 g FMM60-02TF symbol test conditions maximum ratings v dss t j = 25 c to 150 c 200 v v dgr t j = 25 c to 150 c, r gs = 1m 200 v v gsm transient 30 v i d25 t c = 25 c 33 a i dm t c = 25 c, pulse width limited by t jm 150 a i a t c = 25 c 5 a e as t c = 25 c 1 j dv/dt i s i dm , v dd v dss ,t j 150 c 10 v/ns p d t c = 25 c 125 w advance technical information symbol test conditions maximum ratings t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c v isold 50/60h z , rms, t = 1min, leads-to-tab 2500 ~v t l 1.6mm (0.062 in.) from case for 10s 300 c t sold plastic body for 10s 260 c f c mounting force 20..120 / 4.5..27 n/lb. v dss = 200v i d25 = 33a r ds(on) 40m t rr(typ) = 82ns features z silicon chip on direct-copper bond (dcb) substrate - ul recognized package - isolated mounting surface - 2500v electrical isolation z avalanche rated z low q g z low drain-to-tab capacitance z low package inductance advantages z low gate drive requirement z high power density z fast intrinsic rectifier z low drain to ground capacitance z fast switching applications z dc and ac motor drives z ups, solar and wind power inverters z synchronous rectifiers z multi-phase dc to dc converters z industrial battery chargers z switching power supplies t2 3 5 4 1 2 t1 3 5 4 1 2 isoplus i4-pak tm 1 5 isolated tab
ixys reserves the right to change limits, test conditions, and dimensions. FMM60-02TF isoplus i4-pak tm outline ref: ixys co 0077 r0 ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 symbol test conditions 2 characteristic values (t j = 25 c unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 250 a 200 v v gs(th) v ds = v gs , i d = 250 a 2.5 4.5 v i gss v gs = 20 v, v ds = 0v 200 na i dss v ds = v dss 5 a v gs = 0v t j = 125 c 250 a r ds(on) v gs = 10v, i d = 30a, note 1 32 40 m g fs v ds = 10v, i d = 60a, note 1 40 62 s c iss 3700 pf c oss v gs = 0v, v ds = 25 v, f = 1 mhz 520 pf c rss 37 pf t d(on) resistive switching times 39 ns t r v gs = 10v, v ds = 0.5 z v dss , i d = 30a 46 ns t d(off) r g = 5 (external) 75 ns t f 42 ns q g(on) 90 nc q gs v gs = 10v, v ds = 0.5 z v dss , i d = 30a 33 nc q gd 21 nc r thjc 1.0 c/w r thcs 0.15 c/w source-drain diode characteristic values t j = 25 c unless otherwise specified) symbol test conditions 3 min. typ. max. i s v gs = 0v 33 a i sm repetitive, pulse width limited by t jm 150 a v sd i f = 60a, v gs = 0v, note 1 1.5 v t rr 82 ns i rm 15.3 a q rm 0.63 c note 1: pulse test, t 300 s, duty cycle, d 2 %. advance technical information the product presented herein is under development. the technical specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated objective result. ixys reserves the right to change limits, test conditions, and dimensions without notice. i f = 25a, -di/dt = 100a/ s v r = 100v, v gs = 0v
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